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Assessment of selected materials and assembly technologies for power electronics modules with the capability to operate at high temperatures
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| Author(s) |
Joris HAMERS, Slavo KICIN |
| Abstract |
Wide-band gap semiconductors allow operation of power electronics at considerably higher temperatures than Si-devices. However, a significant improvement of a power module temperature capability is necessary to fully exploit this benefit. For this reason reliability of various ceramic substrates undergoing liquid-liquid thermal shock cycling -50 – 190 C was tested. Additionally, an impact of the large temperature-span shock cycling on module assembly technologies was studied with focus on Ag-sintering. The benchmarked DUTs were mainly investigated using scanning acoustic microscopy, scanning electron microscopy and laser profilometry. The obtained results were compared with performance of CTE optimized double-side cooled module prototypes.Data presented in this paper extend already published information. For example, the sintered bond of a SiC diode and an AlN/Al substrate was more robust against cycling than the bond of a SiC diode and a Si3N4/Cu substrate. On the other hand, Si3N4/Cu substrates were significantly more robust than AlN/Al substrates. It was also observed that roughening of Al-metallization can be strongly modified by adding of additional elements. CTE optimized double-side cooled modules were showing high reliability of interconnections; however, a different failure mode – cracking of semiconductor chips was seen. |
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| Filename: | 0488-epe2013-full-17380676.pdf |
| Filesize: | 2.591 MB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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