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Analysis of Power Loss of a Grid Connected PV-Inverter with Si- and SiC-Transistors for Generation of Reactive Power
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| Author(s) |
Christian WILHELM, Juergen THOMA, David DERIX |
| Abstract |
Due to new grid codes for grid connected photovoltaic power generation, since 2012 PV inverters have to be able to feed in reactive power down to a power factor of cos(φ)=0.9 besides their normal operation with pure active power [1]. In this paper the influence of different semiconductors on the power losses as function of the power factor will be studied on the base of a three-level MNPC topology. In the first step an analytical method will be found to determine the losses, based on the methods shown in [2], [3] and [4] for full-bridge and NPC topology. Then in the second step the theoretical results will be refined by using a simulation software for power electronics. Finally the power losses from both theoretical methods will be compared to those of a real measurement setup to verify the correctness of these results. Different types of Si-IGBTs and SiC-JFETs are used. Depending on the selected transistors, the power losses increase or decrease with the power factor cos(φ). |
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| Filename: | 0256-epe2013-full-16495490.pdf |
| Filesize: | 905 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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