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A review on real time physical measurement techniques and their attempt to predict wear out status of IGBT
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| Author(s) |
Pramod GHIMIRE, Stig MUNK-NIELSEN, Paul THØGERSEN, Bjorn RANNESTAD |
| Abstract |
Insulated Gate Bipolar Transistors (IGBTs) are key component in power converters. Reliability of power converters depend on wear-out process of power modules. A physical parameter such as the on-state collector-emitter voltage (Vce) shows the status of degradation of the IGBT after a certain cycles of operation. However, the Vce mainly shows the wear-out of bond wire lift-off and solder degradation. The Vce is normally used to estimate the junction temperature in the module. The measurement of Vce is sensitive to the converter power level and fluctuations in the surrounding temperature. In spite of difficulties in the measurement, the offline and online Vce measurement topologies are implemented to study the reliability of the power converters. This paper presents a review in wear-out prediction methods of IGBT power modules and freewheeling diodes based on the real time Vce measurement. The measurement quality and some practical issues of those measurement techniques are discussed. Furthermore, the paper proposes the requirements for the measurement and prognostic approach to determine wear-out status of power modules in field applications. The online Vce measurement for a selected topology is also shown in the paper. |
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| Filename: | 0597-epe2013-full-13490280.pdf |
| Filesize: | 376.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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