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Ultrafast Turn-Off of a Normally-On SiC JFET for Protection Against Short-Circuit Operation
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| Author(s) |
Fabien DUBOIS, Damien RISALETTO, Dominique BERGOGNE, Remi PERRIN, Abderrahime ZAOUI, Herve MOREL, Régis MEURET |
| Abstract |
The use of normally on Silicon Carbide (SiC) JFET devices poses the question of safety and reliabilityin Voltage Fed Inverter (VFI) applications. Indeed, when a JFET is not driven with a sufficientnegative voltage, the JFET is conducting and the VFI may be short-circuited. Therefore, it is needed togenerate a negative voltage to turn-off the JFET to protect the VFI in case of gate driver failure. Thesettling time of this negative voltage must be inferior to the power system constant time to reduce therise time of the short-circuit current. In this paper, a solution to protect the JFET and the system isproposed. A circuit description of an innovative topology using a Forward-Flyback topology withPrimary Side Sensing (PSS) technique and an Output Voltage Estimation based on the Time ConstantMatching (OVETCM) is presented. Moreover, the converter protects the VFI for an input range from3 V to 610 V and up to 150 °C. Experimental results are provided and validate the design of the safetysystem. |
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| Filename: | 0612-epe2011-full-08472489.pdf |
| Filesize: | 579.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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