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   High-Temperature Die-Attaches for SiC Power Devices   [View] 
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 Author(s)   Amandine MASSON, Cyril BUTTAY, Herve MOREL, Christophe RAYNAUD, Stanislas HASCOET, Laurent GREMILLARD 
 Abstract   SiC devices have been substituted to Si dies for high temperature applications. However, classical packagings are not adapted for harsh environment and new solutions for back-side die attach must be envisaged. In this paper, theoretical basis and results for nano-silver sintering Transient Liquid Phase Bonding will be presented. 
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Filename:0109-epe2011-full-11253943.pdf
Filesize:2.977 MB
 Type   Members Only 
 Date   Last modified 2012-01-26 by System