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High-Temperature Die-Attaches for SiC Power Devices
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Author(s) |
Amandine MASSON, Cyril BUTTAY, Herve MOREL, Christophe RAYNAUD, Stanislas HASCOET, Laurent GREMILLARD |
Abstract |
SiC devices have been substituted to Si dies for high temperature applications. However, classical packagings are not adapted for harsh environment and new solutions for back-side die attach must be envisaged. In this paper, theoretical basis and results for nano-silver sintering Transient Liquid Phase Bonding will be presented. |
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Filename: | 0109-epe2011-full-11253943.pdf |
Filesize: | 2.977 MB |
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Type |
Members Only |
Date |
Last modified 2012-01-26 by System |
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