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Evaluation of Inherent Elements in a SiC Power MOSFET by Its Equivalent Circuit
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Author(s) |
Nathabhat PHANKONG, Tatsuya YANAGI, Takashi HIKIHARA |
Abstract |
Device parasitics or inherent elements in a power MOSFET limit and affect its switching behavior. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, an equivalent circuit for SiC power MOSFET is proposed with taking the physical structure into account and evaluating the inherent elements. |
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Filename: | 0487-epe2011-full-08010869.pdf |
Filesize: | 453.5 KB |
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Type |
Members Only |
Date |
Last modified 2012-01-26 by System |
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