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Active Protections for Normally-On SiC JFET
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| Author(s) |
Fabien DUBOIS, Dominique BERGOGNE, Damien RISALETTO, Herve MOREL, Cyril BUTTAY, Regis MEURET |
| Abstract |
Normally-on Silicon Carbide (SiC) JFETs are powerful power switches that allow improvement of theefficiency and high temperature operation of Voltage Fed Inverter (VFI). Moreover, the need forheavy and costly cooling system can be radically decreased due to the high thermal conductivity thatexhibits the SiC material compared to Si counterpart. However some safety considerations have to betaken against short-circuit and voltage breakdown. In this paper, it is proposed an overview of thefailure mechanisms of the SiC JFET. Fast and reliable solutions to protect SiC JFETs are alsopresented. Experimental validation of such protections and investigation of gate destruction mode areproposed |
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| Filename: | 0452-epe2011-full-08454986.pdf |
| Filesize: | 2.051 MB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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