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A New Approach to Higher Density Rectifier with SiC Power Devices for 380V DC Distribution System
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Author(s) |
Yusuke HAYASHI, Masato MINO |
Abstract |
A new approach has been proposed for creating higher power density 200Vac / 380Vdc converters to be installed in 380 V DC distribution systems. This approach requires a high density 3-Phase PWM converter. A SiC-JFETs and SiC-SBDs pair is attractive because of its low conduction loss created by a synchronous rectification and low switching loss by using uni-polar power devices. A design has already been proposed and experimentally verified. The feasibility has been proven by comparing it with the existing power unit for 380 V DC distribution systems. |
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Filename: | 0656-epe2011-full-13482864.pdf |
Filesize: | 783.9 KB |
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Type |
Members Only |
Date |
Last modified 2012-01-26 by System |
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