| |
A High Power Density SiC-JFet-based Matrix Converter
| [View]
[Download]
|
| Author(s) |
Liliana DE LILLO, Lee EMPRINGHAM, Martin SCHULZ, Pat WHEELER |
| Abstract |
Continuous development in semiconductor material allows designers engineers to push power density of inverter technology to new limits. The Matrix Converter topology itself, by not including the large DC-link capacitors of a typical rectifier-DC-link – Inverter topology offers an advantageous starting point in order to achieve a reliable and compact implementation of a power converter capable of working at higher operating temperatures. This paper describes the design of a Silicon Carbide JFET-based matrix converter which has been developed to reach a target of power density of 20kW/dm3 with forced air cooling, based on Infineon Technology for the power circuit and its control. |
| Download |
| Filename: | 0899-epe2011-full-02365363.pdf |
| Filesize: | 932.6 KB |
|
| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
| |
 |