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A Comprehensive Physics-Based Power MOSFET Model in VHDL-AMS for Circuit Simulations
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| Author(s) |
Lutz GOEHLER, Matthias ROSE |
| Abstract |
This paper presents a comprehensive Power MOSFET model for system and circuit simulation and its implementation in VHDL-AMS. The equation set features a non-quasi-static description of the body diode, a charge model for the inner MOSFET, self-heating and the inclusion of major parasitics. A comparison between simulation and measurement proves the good quality obtained. |
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| Filename: | 0005-epe2011-full-09354001.pdf |
| Filesize: | 818.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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