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A 2.5kV to 22V, 1kW Radar Decoy Power Supply Using Silicon Carbide Semiconductor Devices
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| Author(s) |
Amit JAIN, David MCINTOSH, Matt JONES, Brian RATLIFF |
| Abstract |
A 2.5kVdc to 22Vdc 1kW power supply utilizing 3.2kV silicon carbide (SiC) MOSFETs and Schottky diodes is presented. The power supply provides power to solid-state microwave power amplifiers in an aircraft towed radar decoy. High voltage silicon carbide semiconductors are utilized to switch the high voltage at high frequency without requiring input series connection of devices or converters. A half bridge ZVS topology is utilized in order to eliminate switching loss and minimize noise. Device characteristics, circuit design challenges, packaging, and bench top experimental results are included. Implantation solutions to isolated gate drive and startup from 2.5kV are presented. High voltage SiC MOSFETs and schottky diodes prove to be the enabling technology for high frequency and high power density conversion required in this application. |
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| Filename: | 0912-epe2011-full-09385987.pdf |
| Filesize: | 1.903 MB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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