| Abstract |
This paper presents a high power density vertical integration scheme for bi-directional power switches. In this original approach, the power semiconductor devices are stacked in pairs, but are both connected with their backside to the cooling plane. Thus, double sided cooling is ensured, while power density and parasitic inductance values are improved as compared to previous approaches. In particular, this work considers a full 3-phase bi-directional switch, of the kind required, for instance, to implement a 3-to-1-phase matrix converter. |
