| |
Trench isolation technique for Reverse Blocking IGBT using Boron Nitride doping wafers
| [View]
[Download]
|
| Author(s) |
MIQUEL VELLVEHI, JOSE LUIS GALVEZ, XAVIER PERPINYA, XAVIER JORDA, PHILIPPE GODIGNON, JOSE MILLAN |
| Abstract |
A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation technique which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been demonstrated with the electrical measurements of the fabricated devices. |
| Download |
| Filename: | 0929-epe2009-full-12160503.pdf |
| Filesize: | 261.5 KB |
|
| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
| |
 |