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Silicon Carbide PiN Physically-Based Model Implemented in the Pspice Circuit Simulator
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| Author(s) |
Leobardo HERNÀNDEZ, ABRAHAM CLAUDIO, Marco RODRIGUEZ, Mario PONCE, Pedro ROSALES, Carlos Zuñiga |
| Abstract |
The main novelty in this paper is modeling with Pspice the real stored charge inside SiC PiN diodes depending on the working regime of the device (turn-on, on-state, and turn-off). The developed model is based on the adequate calculation of the ambipolar length (L) as a function of the charge injected to the N- region, which allows finding an analytical solution for the ambipolar diffusion equation (ADE). In special during the turn-off, the carrier concentration was modeled in three different regions. The physical-based model allows predicting dynamic and static behaviors of the SiC PiN diode. |
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| Filename: | 0652-epe2009-full-19183271.pdf |
| Filesize: | 1.124 MB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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