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Performances of MOS-Gated GTO in High Voltage Power Applications
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| Author(s) |
CESARE RONSISVALLE, Annunziata SANSEVERINO, Vicenzo ENEA, Carmine ABBATE, Giovanni BUSATTO |
| Abstract |
In this paper we present a comparative study between the characteristics of the MOS-Gated GTO, a new power semiconductor device, and the IGBT having the same n-n+p+ vertical structure. The blocking voltage of the analyzed devices ranges between 1.2kV and 4.5kV. Simulation results show that the MOS-GTO exhibits a much better trade-off between on state and switching characteristics than the IGBT particularly in the range of the high blocking voltages. The excellent performances of the MOS-GTO make it a very promising device for high voltage power applications. |
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| Filename: | 0749-epe2009-full-13123573.pdf |
| Filesize: | 153.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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