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Passive Turn-On Process of IGBTs in Matrix Converter Applications
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Author(s) |
Roman BABURSKE, Daniel DOMES, Josef LUTZ, Wilfried HOFMANN |
Abstract |
The passive turn-on of IGBTs occurs in Matrix converter applications. This paper analyzes different IGBT-types in terms of passive turn-on. Measurements of passive turn-ons of different IGBT-types are shown and compared with diode turn-ons. The dependency of the turn-on voltage peak on the temperature, the gate resistance and the current is investigated. The results are analyzed by numerical device simulations. |
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Filename: | 0854-epe2009-full-11150074.pdf |
Filesize: | 370.5 KB |
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Type |
Members Only |
Date |
Last modified 2010-01-27 by System |
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