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   Numerical Analysis of Destruction Modes in IGBT Chips   [View] 
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 Author(s)   Ulla KNIPPER, Gerhard WACHUTKA, Frank PFIRSCH, Thomas RAKER, Josef NIEDERMEYR 
 Abstract   In IGBTs avalanche breakdown usually sets on in the edge termination structure. In consequence of electrical crosstalk, the destruction mechanism in very thin devices is confined to the neighboring cells in the active part of the chip. Thus, in order to achieve the largest possible safe-operating area, design optimization has to focus on the edge termination structure and the neighboring active cells in its vicinity. 
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Filename:0985-epe2009-full-12114355.pdf
Filesize:409.2 KB
 Type   Members Only 
 Date   Last modified 2010-01-27 by System