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Modelling of a Symmetrical Bipolar Monolithic Bidirectional Switch
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| Author(s) |
Luong Viêt PHUNG, François IHUEL, Nathalie BATUT, Jean-Baptiste QUOIRIN, Ambroise SCHELLMANNS, Laurent VENTURA |
| Abstract |
The purpose of this paper is to introduce a new concept of symmetrical power bipolar junction transistor for appliances applications with low forward voltage (< 1 V). Design and static simulations are discussed as well as the potential electrical impact of silicon hydrophobic direct wafer bonding used to realize such a device. Simulations results, for a nominal current of 5 A and a breakdown voltage of 500 V, are compared with existent solutions. |
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| Filename: | 0667-epe2009-full-17132178.pdf |
| Filesize: | 672.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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