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HF Gate Drive Circuit for a Normally-On SiC JFET with Inherent Safety
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| Author(s) |
Tsuguhiro TAKUNO, Takashi HIKIHARA, Takashi TSUNO, HATSUKAWA SATOSHI |
| Abstract |
A gate drive circuit for a silicon carbide (SiC) JFET is introduced from the standpoint of application to power conversion circuit. This gate drive circuit enables normally-on JFETs as close as normally-off devices at high switching frequency. The voltage and current responses of the implemented circuit are discussed under loads at the switching frequencies over 1MHz. |
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| Filename: | 0296-epe2009-full-10482137.pdf |
| Filesize: | 173.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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