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Field Balanced SG-RSO structure showing tremendous potential for low voltage Trench MOSFETs
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| Author(s) |
Chin Foong TONG, Philip Andrew MAWBY, James COVINGTON |
| Abstract |
This paper presents a 30V range ‘Field Balanced’ Split-Gate RSO (Resurf Stepped Oxide) MOSFET showing extremely low Qgd of 1.0 nC mm^2 for the first time. By introducing a low doped region on an optimised 30V Split-Gate RSO MOSFET, the Figure of Merit (FOM) improves from 8.09 nC to around 6.40 mohm nC. From this investigation, it has been demonstrated that the ‘Field Balanced’ on a a Split-Gate structure can give a good RdsON vs Qgd trade off. The exceptionally low Qgd will allow the ‘Field Balanced’ structure to achieve a good efficiency even in high switching frequency converter. |
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| Filename: | 0991-epe2009-full-12335678.pdf |
| Filesize: | 282 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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