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Dynamic characterization of high voltage power MOSFETs for behavior simulation models
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| Author(s) |
Vera HÖCH, Heiner JACOBS, Jürgen PETZOLDT, Andreas SCHLÖGL, Gerald DEBOY |
| Abstract |
This paper describes the determination of interelectrode capacitances of a fast switching high voltage super junction transistor from dynamic measurements in a commutation circuit with a SiC Schottky diode. The gained capacitance voltage characteristics reflect the transistor’s effective parasitic capacitances during switching for the given application. Thus, these characteristics are used for the transistor’s parameterization within a buck converter simulation model. The resulting switching simulation characteristics of the transistor correspond virtually with the appendant dynamic measurements. |
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| Filename: | 0091-epe2009-full-01451976.pdf |
| Filesize: | 658 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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