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Design Considerations on Field-Stop Layer Processing in a Trench-Gate IGBT
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| Author(s) |
Antonino Sebastiano ALESSANDRIA, Leonardo FRAGAPANE, Giuseppe MORALE |
| Abstract |
In recent years a new device concept appeared in the IGBT technology. It is a structure between a PT and an NPT device, with a low-doped emitter, where the fundamental role is played by the Field-Stop layer. In this paper we fixed some considerations about a proper design of this layer. Some simulated and real electrical characteristics of a trench-gate emitter-implanted IGBT will be shown and correlated to the Field-Stop layer process parameters. |
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| Filename: | 0695-epe2009-full-11204810.pdf |
| Filesize: | 1.659 MB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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