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Complementary MOS structures for common mode EMI reduction
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| Author(s) |
MANH HUNG TRAN, Jean Christophe CREBIER |
| Abstract |
The paper deals with the management and the reduction of conducted common mode EMI noise in power converters. Especially, it is presented how complementary P-N MOSFET structures, used in a specific manner, are able of great and natural common mode current reductions. The advantages obtained by the use of complementary MOSFET topologies are balanced with the additional conduction losses that P MOSFETs are responsible of. The paper presents these issues based on simulation and practical results. |
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| Filename: | 0531-epe2009-full-15044919.pdf |
| Filesize: | 493.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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