| Abstract |
High speed IGBT utilizing EB irradiation process for lifetime control of active layer have been developed for industry applications, home use applications, and so on. The saturation voltage instability in such IGBT under the high current density condition for long-time is one of the remarkable problems and is inevitable obstacles to be overcome. We have investigated the dependence on the process condition and on the stress condition of this phenomenon. We have evaluated the I-V characteristics, switching characteristics, threshold voltage, and leakage current to accompany the saturation voltage instability. Analysis using the cathodeluminescence methods has been also performed to suppress this problem. |
