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A Static and Dynamic Model for a Silicon Carbide Power MOSFET
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| Author(s) |
Nathabhat PHANKONG, Tsuyoshi FUNAKI, Takashi HIKIHARA |
| Abstract |
Static C-V and I-V characteristics related dynamic behaviors of power MOSFET. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, a model for SiC power MOSFET is proposed that includes the physics of semiconductor, physical structures of the device, and extracted parameters from the measured C-V characteristics. The static I-V characteristics are also discussed with the C-V characteristics. It is clearly shown that the simulated results in switching behavior of the proposed model coincide with experimental results suitably in some conditions. |
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| Filename: | 0173-epe2009-full-16461115.pdf |
| Filesize: | 561.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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